用于ψ＇→γ＇xcJ→γ＇γJ/ψ过程中多极分析的产生子

为了实验研究粲偶素ψ＇级联衰变过程ψ＇→γ＇xcJ→γ＇γJ/ψ,一个用于正确描述全部末态角分布的产生子是必要的．可以通过分析角分布的关联来确定这一过程的多极展开参数（或者等效的螺旋度振幅），而从中可以知道高阶电磁多极矩和相对论修正的贡献，同时可以检验ψ＇是不是ψ＇（2S）和ψ＇（1D）的混合．介绍了一个能完全描述这一过程的角分布的产生子，同时讨论了测量多极参数的测量方法．这些都可以被用在BESⅢ或者CLEOc的分析当中．     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物     

Lorentz-Compton佯谬与一个双赢判决性散射实验设计

通过对“可见光区域是否存在Compton效应”的讨论而进一步深化到经典条件下“光的量子理论能否包含光的经典电磁理论”的实验验证,发现了Lorentz-Compton佯谬,并基于逆Compton散射设计了一个敏感而又可行的双赢判决性散射实验来解决此佯谬。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

类氢类氦类锂镁离子双电子复合的旁观电子角动量研究

类氢类氦类锂镁离子经中间双激发态进行的双电子复合过程在研究惯性约束聚变电子温度中占有很重要的地位.用准相对论方法计算了双电子复合经不同Rydberg态跃迁通道的复合速率系数,并给出不同离化度离子的双电子复合速率系数随电子温度的变化规律.显示出离子的相关能对峰值的电子温度有很大影响,当类氢离子跃迁通道的旁观电子角动量为1时双电子复合系数最大,而类锂离子是旁观电子角动量为3时最大. 关键词： 双电子复合 镁离子 角动量     

Controlling global stochasticity of Hamiltonian systems by nonlinear perturbation

A method of controlling global stochasticity in Hamiltonian systems by applying nonlinear perturbation is proposed. With the well-known standard map we demonstrate that this control method can convert global stochasticity into regular motion in a wide chaotic region for arbitrary initial condition, in which the control signal remains very weak after a few kicks. The system in which chaos has been controlled approximates to the original Hamiltonian system, and this approach appears robust against small external noise. The mechanism underlying this high control efficiency is intuitively explained. Received 15 January 2002 Published online 6 June 2002     

Mössbauer and X-ray diffraction characterization of Fe60Al40 coatings prepared by thermal spraying

Microstructured (atomized) and nanostructured (milled) Fe₆₀Al₄₀ powders together with their corresponding coatings synthesized by High Velocity Oxy-fuel (HVOF) or Atmospheric Plasma Spray (APS) thermal spraying techniques have been characterized by Mössbauer Spectroscopy (MS) and X-ray Diffraction (XRD). The evolution of the microstructure and the atomic ordering degree in the powders and coatings are discussed at the light of the various processing conditions. The operational correlation between the parameters of the duplex morphology of coatings and the processing parameters is discussed.     

Spectrum Simulation of Li-Like Aluminium Plasma

X-ray emission spectra for L-shell of Li-like aluminium ions are simulated by using the flexible atomic code based on the collisional radiative model. Atomic processes including radiative recombination, dielectronic recombination, collisional ionization and resonance excitation from the neighbouring ion （Al^9＋ and Al^11＋ ） charge states of the target ion （Al^10＋） are considered in the model. In addition, the contributions of different atomic processes to the x-ray spectrum are analysed. The results show that dielectronic recombination, radiative recombination, collisional ionization and resonance excitation, other than direct collisional excitation, are very important processes.     

吸积盘的X射线辐射对周围星际物质的离化研究

利用辐射流体力学程序对三倍频纳秒激光与靶物质相互作用进行了模拟研究，得到了可以产生黑体辐射谱分布的激光等离子体X射线辐射靶的最佳厚度；数值模拟研究了黑体谱分布的X射线辐射场对等离子体系统平均离化度分布的影响，它有助于深入理解天体物理中吸积盘对它周围星际物质的离化影响. 关键词： 辐射流体力学 激光等离子体 X射线辐射 吸积盘 离化     

微分算子扰动问题的值域研究

本文研究作用在C2周期函数空间上的微分算子u→u″ g(u) ,其中g(u)为连续有界函数.我们将证明上述微分算子的值域限制在周期函数空间的“超曲面”中.